Abstract

For the stationary hydrodynamic model for semiconductors with sonic boundary, represented by Euler-Poisson equations, it possesses the various physical solutions including interior subsonic solutions/interior supersonic solutions/shock transonic solutions/$C^1$-smooth transonic solutions. However, the structural stability for these physical solutions is challenging and has remained open as we know. In this talk, we give the structural stability of interior subsonic solutions when the doping profiles are restricted in the subsonic region. The main result is proved by using the local (weighted) singularity analysis and the monotonicity argument. Both the result itself and techniques developed here will give us some truly enlightening insights into our follow-up study on the structural stability of the remaining types of solutions. This is a joint work with Haifeng Hu and Ming Mei.